Datasheet > 2SB0970|2SB970

2SB0970|2SB970

更新时间： 2024-09-17 23:20:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
3页	79K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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中文翻译

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数据手册

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2SB0970|2SB970 数据手册

Transistors

2SB0970 (2SB970)

Silicon PNP epitaxial planar type

For low-voltage output amplification

Unit: mm

+0.10

–0.05

0.40

+0.10

–0.06

0.16

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

(0.95) (0.95)

1.9 0.1

+0.20

■ Absolute Maximum Ratings T_a= 25°C

2.90

–0.05

Parameter

Symbol

Rating

−15

Unit

10˚

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−10

1: Base

2: Emitter

3: Collector

−7

Collector current

I_C

I_CP

P_C

T_j

− 0.5

−1

EIAJ: SC-59

Mini3-G1 Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

200

°C

Marking Symbol: 1R

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−15

−10

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −10 V, I_E= 0

V_CE= −2 V, I_C= − 0.5 A

V_CE= −2 V, I_C= −1 A

−100



Forward current transfer ratio ^*

h_FE1

h_FE2

130

350

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= − 0.4 A, I_B= −8 mA

V_BE(sat)I_C= − 0.4 A, I_B= −8 mA

− 0.16 − 0.30

Base-emitter saturation voltage ^*

− 0.8

130

−1.2

Transition frequency

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE1

130 to 220

180 to 350

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2003

SJC00063BED

12 3

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